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SEMICONDUCTOR KF2N60P/F
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF2N60P
A
This planar stripe MOSFET has better characteristics, such as fast O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for electronic ballast and
E G DIM MILLIMETERS
switching mode power supplies. A _
9.9 + 0.2
B B 15.95 MAX
Q C 1.3+0.1/-0.05
D _
0.8 + 0.1
FEATURES I
E _
3.6 + 0.2
VDSS= 600V, ID= 2A K
F _
2.8 + 0.1
P G 3.7
Drain-Source ON Resistance : RDS(ON)=4.4 (Max) @VGS = 10V M H 0.5+0.1/-0.05
L
I 1.5
Qg(typ) = 6.0nC J J _
13.08 + 0.3
D K 1.46
L _
1.4 + 0.1
N N H
M _
1.27+ 0.1
N _
2.54 + 0.2
MAXIMUM RATING (Ta=25 ) O _
4.5 + 0.2
P _
2.4 + 0.2
RATING Q _
9.2 + 0.2
CHARACTERISTIC SYMBOL UNIT 1 2 3 1. GATE
KF2N60P KF2N60F 2. DRAIN
3. SOURCE
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V TO-220AB
@TC=25 2 2*
ID
Drain Current @TC=100 1.3 1.3* A
KF2N60F
Pulsed (Note1) IDP 4 4*
A C
Single Pulsed Avalanche Energy EAS 60 mJ
(Note 2) F
O
Repetitive Avalanche Energy EAR 2.3 mJ E DIM MILLIMETERS
(Note 1)
B
A _
10.16 + 0.2
Peak Diode Recovery dv/dt
G
dv/dt 4.5 V/ns B _
15.87 + 0.2
(Note 3) C _
2.54 + 0.2
D _
0.8 + 0.1
Drain Power Tc=25 50 28.4 W
PD E _
3.18 + 0.1
Dissipation
K
Derate above 25 0.4 0.23 W/ F _
3.3 + 0.1
G _
12.57 + 0.2
L M
Maximum Junction Temperature Tj 150 R H _
0.5 + 0.1
J
J _
13.0 + 0.5
Storage Temperature Range Tstg -55 150 K _
3.23 + 0.1
D
L 1.47 MAX
Thermal Characteristics M 1.47 MAX
N N H
N _
2.54 + 0.2
Thermal Resistance, Junction-to-Case RthJC 2.5 4.4 /W O _
6.68 + 0.2
Q _
4.7 + 0.2
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W 1. GATE R _
2.76 + 0.2
Ambient 1 2 3
Q
2. DRAIN
* : Drain current limited by maximum junction temperature. 3. SOURCE
* Single Gauge Lead Frame
PIN CONNECTION
TO-220IS (1)
(KF2N60P, KF2N60F)
D
G
S
2011. 4. 29 Revision No : 0 1/2
KF2N60P/F
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.61 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.0A - 3.7 4.4
Dynamic
Total Gate Charge Qg - 6.0 -
VDS=480V, ID=2A
Gate-Source Charge Qgs - 1.0 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2.8 -
Turn-on Delay time td(on) - 10 -
VDD=300V
Turn-on Rise time tr - 20 -
ID=2A ns
Turn-off Delay time td(off) - 25 -
RG=25 (Note4,5)
Turn-off Fall time tf - 20 -
Input Capacitance Ciss - 270 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 35 - pF
Reverse Transfer Capacitance Crss - 3.9 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 2
VGS Pulsed Source Current ISP - - 8
Diode Forward Voltage VSD IS=2A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=2A, VGS=0V, - 290 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ - 0.9 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=28mH, IS=2A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 2A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF2N60
KF2N60
F 001 2
P 001 2
1 PRODUCT NAME
2 LOT NO
2011. 4. 29 Revision No : 0 2/7
KF2N60P/F
Fig1. ID - VDS Fig2. ID - VGS
1
10
1 10
VGS=10V
Drain Current ID (A)
Drain Current ID (A)
VGS=7V
0
10 TC=100 C
VGS=5V
0
10
25 C
-1
10
-2 -1
10 10
0.1 1 10 100 2 4 6 8 10
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.2 12.0
VGS = 0V
On - Resistance RDS(ON) ()
IDS = 250
10.0
1.1
8.0
VGS=6V
1.0 6.0 VGS=10V
4.0
0.9
2.0
0.8 0
-100 -50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5 3.0
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD Fig6. RDS(ON) - Tj
10
2 3.0
VGS =10V
Reverse Drain Current IS (A)
IDS = 1A
2.5
Normalized On Resistance
10
1 2.0
TC=100 C 1.5
25 C
10
0 1.0
0.5
10
-1 0.0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -100 -50 0 50 100 150
Source - Drain Voltage VSD (V) Junction Temperature Tj ( C)
2011. 4. 29 Revision No : 0 3/7
KF2N60P/F
Fig 7. C - VDS Fig8. Qg- VGS
1000 12
ID=2A
Gate - Source Voltage VGS (V)
10
Ciss
Capacitance (pF)
100 8
6
Coss VDS = 480V
10 4
Crss 2
1 0
0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area Fig10. Safe Operation Area
(KF2N60P) (KF2N60F)
101 Operation in this 101 Operation in this
area is limited by RDS(ON) area is limited by RDS(ON)
10