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BSS84
Small Signal MOSFET
P-Channel 3 DRAIN
SOT-23
Features: 1 3
*Low On-Resistance : 10 GATE 1
*Low Input Capacitance: 30PF 2
*Low Out put Capacitance : 10PF 2
*Low Threshole : 2.0V SOURCE
*Fast Switching Speed : 2.5ns
Application:
* DC to DC Converter
* Cellular & PCMCIA Card
* Cordless Telephone
* Power Management in Portable and Battery etc.
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Symbol Value Unite
Drain-Source Voltage VDSS 50 V
Gate-Source Voltage VGS +
-20 V
Continuous Drain Current (TA=25 C) ID 130 mA
Pulsed Drain Current(tp 10us) IDM 520 mA
Power Dissipation (TA=25 C) PD 225 mW
Maximax Junction-to-Ambient R JA 556 C/W
Operating Junction and Storage
TJ, Tstg -55 to 150 C
Temperature Range
Device Marking
BSS84=PD
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BSS84
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Static (1)
Drain-Source Breakdown Voltage V(BR)DSS V
VGS=0V, ID=250 uA 50 - -
Gate-Source Threshold Voltage VGS (th)
VDS=VGS, ID=1.0 mA 0.8 - 2.0 V
Gate-Source Leakage Current IGSS + uA
+
VDS=0V, VGS=-20V - - -60
Zero Gate Voltage Drain Current
VDS=25V, VGS=0V IDSS - - 0.1 uA
VDS=50V, VGS=0V 15
Drain-Source On-Resistance
VGS=5.0V, ID=100mA
rDS (on) - 5.0 10
Forward Transconductance gfs 50 - - mS
VDS=25V, ID=100mA, f=1.0KHZ
Dynamic
Input Capacitance Ciss - 30 -
VDS=5V, VGS=0V, f=1MHZ
Output Capacitance - -
Coss 10 PF
VDS=5V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
Crss - 5.0 -
VDS=5V, VGS=0V, f=1MHZ
Switching (2)
Turn-On Time
td(on) - 25 - nS
VDD =-15V, I D=-2.5A, R L =50
Rise Time
tr - 1.0 -
VDD =-15V, I D=-2.5A, R L =50
Turn-Off Time
td(off ) - 16 - nS
VDD =-15V, I D=-2.5A, R L =50
Fall Time -
tf - 8.0
VDD =-15V, I D=-2.5A, R L =50
Gate Charge QT - 6000 - PC
Source-Drain Diode Characteristics
Continuous Current IS - - 0.130
A
Pulsed Current I SM - - 0.520
Forward Voltage (2) VSD - 2.5 - V
Note:
1. Pulse Test : PW 300us, Duty Cycle 2%.
2. Switching Time is Essentially Independent of Operating Temperature.
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BSS84
TYPICAL ELECTRICAL CHARACTERISTICS
0.6 0.5
VDS = 10 V 25 C TJ = 25 C VGS = 3.5 V
0.45
0.5
I D , DRAIN CURRENT (AM PS)
I D , DRAIN CURRENT (AM PS)
0.4 3.25 V
- 55 C
150 C
0.35
0.4
0.3 3.0 V
0.3 0.25
0.2 2.75 V
0.2
0.15
2.5 V
0.1
0.1
0.05 2.25 V
0 0
1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6 7 8 9 10
VGS , GATE- TO- SOURCE VOLTAGE (VOLTS) VDS , DRAIN- TO- SOURCE VOLTAGE (VOLTS)
FIG1. Transfer Characteristics FIG2. On-Region Characteristics
R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS)
R DS(on) , DRAIN- TO- SOURCE RESISTANCE (OHMS)
9 7
VGS = 4.5 V 150 C
6.5 VGS = 10 V
8 150 C
6
7 5.5
6 5
4.5
5 25 C
4 25 C
4 3.5
- 55 C 3
3 - 55 C
2.5
2 2
0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6
ID, DRAIN CURRENT (AM PS) ID, DRAIN CURRENT (AM PS)
FIG3. On-Resistance versus Drain Current FIG4. On-Resistance versus Drain Current
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BSS84
2 8
VGS , GATE-T O-SOURCE VOLTAGE (VOLTS)
R DS(on), DRAIN-TO-SOURCE RESISTANCE
VDS = 40 V
1.8 VGS = 10 V 7 TJ = 25 C
ID = 0.52 A
1.6 6
(NORMALIZED)
5
1.4
VGS = 4.5 V
4
1.2 ID = 0.13 A
3 ID = 0.5 A
1
2
0.8
1
0.6 0
- 55 -5 45 95 145 0 500 1000 1500 2000
TJ , JUNCTION TEMPERATURE ( C) QT, TOTAL GATE CHARGE (pC)
FIG5. On-Resistance Variation with Temperature FIG6. Gate Charge
1
I D , DIODE CURRENT (AMPS)
TJ = 150 C 25 C -55 C
0.1
0.01
0.001
0 0.5 1.0 1.5 2.0 2.5 3.0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
FIG7. Body Diode Forward Voltage
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