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CED6601/CEU6601
P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-60V, -16A, RDS(ON) = 86m @VGS = -10V.
RDS(ON) = 125m @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability. D
Lead free product is acquired.

TO-251 & TO-252 package.

D G

G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK) S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS