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Philips Semiconductors Product Specification

PowerMOS transistor BUK454-200A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a plastic
envelope suitable for use in surface VDS Drain-source voltage 200 V
mount applications. ID Drain current (DC) 9.2 A
The device is intended for use in Ptot Total power dissipation 90 W
Switched Mode Power Supplies Tj Junction temperature 175