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PBSS305NX
80 V, 4.6 A NPN low VCEsat (BISS) transistor
Rev. 02 -- 8 December 2009 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS305PX.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 80 V
IC collector current - - 4.6 A
ICM peak collector current single pulse; - - 9.2 A
tp 1 ms
RCEsat collector-emitter saturation IC = 4 A; [1] - 38 53 m
resistance IB = 200 mA
[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS305NX
80 V, 4.6 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 emitter
2
2 collector
3 base 3
1
3 2 1 sym042
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS305NX SC-62 plastic surface-mounted package; collector pad for good SOT89
heat transfer; 3 leads
4. Marking
Table 4. Marking codes
Type number Marking code[1]
PBSS305NX *5F
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBSS305NX_2