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KTC4075
SOT-23 Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR

Features
Excellent hFE linearity
High hFE
Low Noise
Complementary to KTA2014

Dimensions in inches and (millimeters)

MAXIMUM RATINGS(TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 100 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC = 1mA, IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
DC current gain hFE VCE= 6V, IC=2mA 70 700
Collector-emitter saturation voltage VCEsat IC=100mA, IB= 10mA 0.25 V
Transition frequency fT VCE=10V, IC= 1mA 80 MHz
Collector output capacitance Cob VCE=10V, IE=0, f=1MHz 3.5 pF
Noise figure NF VCE=6V,IE=0.1mA, f=1KHz,RG=10K 10 dB

CLASSIFICATION OF hFE
Rank O Y GR BL

Range 70~140 120~240 200~400 350~700

Marking LO LY LGR LBL
KTC4075
SOT-23 Transistor(NPN)

Typical Characteristics
KTC4075
SOT-23 Transistor(NPN)