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SEMICONDUCTOR KTC4079
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
E
FEATURE M B M
High Power Gain : Gpe=29dB(Typ.) (f=10.7MHz) DIM MILLIMETERS
A _
2.00 + 0.20
D
2 B _
1.25 + 0.15
_
A
0.90 + 0.10
J
C
1 3
G
D 0.3+0.10/-0.05
E _
2.10 + 0.20
G 0.65
MAXIMUM RATING (Ta=25 ) H 0.15+0.1/-0.06
J 1.30
CHARACTERISTIC SYMBOL RATING UNIT K 0.00-0.10
L 0.70
C
Collector-Base Voltage VCBO 35 V H _
L
M 0.42 + 0.10
N 0.10 MIN
Collector-Emitter Voltage VCEO 30 V N N
K
Emitter-Base Voltage VEBO 4 V
1. EMITTER
Collector Current IC 50 mA
2. BASE
Emitter Current IE -50 mA 3. COLLECTOR
Collector Power Dissipation PC 100 mW
Junction Temperature Tj 150