Text preview for : smg2301p.pdf part of Secos smg2301p . Electronic Components Datasheets Active components Transistors Secos smg2301p.pdf
Back to : smg2301p.pdf | Home
SMG2301P
-2.6 A, -20 V, RDS(ON) 130 m
Elektronische Bauelemente P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
DESCRIPTION SC-59
The miniature surface mount MOSFETs utilize a high cell
density trench process to provide low RDS(on) and to ensure A
minimal power loss and heat dissipation.Typical applications L
3
are DC-DC converters and power management in portable 3
and battery-powered products such as computers, printers, Top View C B
PCMCIA cards, cellular and cordless telephones.
1
1 2
K E 2
D
FEATURES
F G H J
Low RDS(on) provides higher efficiency and extends
battery life.
Millimeter Millimeter
Low thermal impedance copper leadframe SC-59 REF.
Min. Max.
REF.
Min. Max.
A 2.70 3.10 G 0.10 REF.
saves board space. B 2.25 3.00 H 0.40 REF.
Fast switching speed. C 1.30 1.70 J 0.10 0.20
D 1.00 1.40 K 0.45 0.55
High performance trench technology. E 1.70 2.30 L 0.85 1.15
F 0.35 0.50
PACKAGE INFORMATION
Drain
Package MPQ LeaderSize
SC-59 3K 7' inch
Gate
Source
MAXIMUM RATINGS (TA = 25