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2SD1757K

TRANSISTOR (NPN) SOT-23

FEATURES
Optimal for muting.

1. BASE
MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER
3. COLLECTOR
Symbol Parameter Value Units
VCBO Collector-Base Voltage 30 V
VCEO Collector-Emitter Voltage 15 V
VEBO Emitter-Base Voltage 6.5 V
IC Collector Current -Continuous 500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A,IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 15 V
Emitter-base breakdown voltage V(BR)EBO IE=50A,IC=0 6.5 V
Collector cut-off current ICBO VCB=20V,IE=0 0.5 A
Emitter cut-off current IEBO VEB=4V,IC=0 0.5 A
DC current gain hFE VCE=3V,IC=100mA 120 560
Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB=50mA 0.4 V
Transition frequency fT VCE=5V, IC= 50mA ,f=100MHz 150 MHz

Collector Output Capacitance Cob VCB=10V,IE=0,f=1MHZ 15 pF

CLASSIFICATION OF hFE
Rank Q R S
Range 120-270 180-390 270-560
MARKING AAQ AAR AAS

1

JinYu www.htsemi.com
semiconductor
2SD1757K

2

JinYu www.htsemi.com
semiconductor