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SEMICONDUCTOR KTC4511
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


HIGH POWER AMPLIFIER APPLICATION.

A C
FEATURES
DIM MILLIMETERS




F
Complementary to KTA1725. S
A _
10.0 + 0.3




P
B _
15.0 + 0.3
E
C _
2.70 + 0.3




B
D 0.76+0.09/-0.05




G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5




K
R _
K 3.7 + 0.2
MAXIMUM RATING (Ta=25 ) M
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1




J
CHARACTERISTIC SYMBOL RATING UNIT D D N _
2.54 + 0.1
P _
6.8 + 0.1
Collector-Base Voltage VCBO 80 V Q _
4.5 + 0.2
R _
2.6 + 0.2
N N H
Collector-Emitter Voltage VCEO 80 V S 0.5 Typ


Emitter-Base Voltage VEBO 6 V
Collector Current IC 6 A 1. BASE




Q
1 2 3
2. COLLECTOR
Base Current IB 3 A
3. EMITTER

Collector Power Dissipation (Tc=25 ) PC 30 W
Junction Temperature Tj 150 TO-220IS
Storage Temperature Range Tstg -55 150




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=6V, IC=0 - - 10 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=25mA, IB=0 80 - - V
DC Current Gain hFE (Note) VCE=4V, IC=2A 55 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=0.2A - - 0.5 V
Transition Frequency fT VCE=12V, IC=0.5A - 20 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 150 - pF
Note : hFE Classification R:55~110, O:80~160.




2007. 5. 22 Revision No : 0 1/3
KTC4511


I C - V CE VCE(sat) - I B




COLLECTOR-EMITTER SATURATION
6 3
A 100 mA 0m A
mA 50m I B=8
COLLECTOR CURRENT I C (A)




00 1 I B=
=2 I B=
IB




VOLTAGE V CE(sat) (V)
I B =50mA
4 2

I B =30mA

I B =20mA
2 1
I B =10mA
I C =6A
I C =4A
I C =2A
0 0
0 1 2 3 4 0 0.5 1.0 1.5

COLLECTOR-EMITTER VOLTAGE VCE (V) BASE CURRENT I B (A)




I C - V BE h FE - I C
6 1k
VCE =4V VCE =4V
COLLECTOR CURRENT I C (A)




500
DC CURRENT GAIN h FE




300
4

Tc=125 C
100
C


0 C
25 C
125




C
Tc=25
-3




50
Tc=




2
Tc=

Tc=




C
30 Tc=-30



0 10
0 1 2 0.01 0.03 0.1 0.3 1 3 10

BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (A)




h FE - I C R th - t
TRANSIENT THERMAL RESISTANCE




1k 1k
VCE =4V 1 NO HEAT SINK

500 2 INFINITE SINK
DC CURRENT GAIN h FE




300 100 1
Tc=125 C
r th ( C/W)




Tc=25 C
100 10
2
Tc=-30 C
50
30 1



10 0.1
0.01 0.03 0.1 0.3 1 3 10 0.001 0.01 0.1 1 10 100 1k

COLLECTOR CURRENT I C (A) TIME t (S)



2007. 5. 22 Revision No : 0 2/3
KTC4511


fT - IE SAFE OPERATING AREA
30
VCE =-12V
CUT-OFF FREQUENCY f T (MHz)




30 I C MAX.(PULSED)

C




COLLECTOR CURRENT I C (A)
1 25 10
20 c= C 100ms* 10
T ms
25 5 *
c= C DC
T
= -30 3 (T
Tc c=
25
C)
10 1

0.5
0.3
*SINGLE NONREPETITIVE
0 PULSE Tc=25 C
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 0.1 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
EMITTER CURRENT I E (A) IN TEMPERATURE
0.05
3 10 30 100 300

COLLECTOR-EMITTER VOLTAGE VCE (V)




Pc - Ta
MAXIMUM POWER DISSIPATION PC (W)




40
(1)Tc=Ta
INFINITE HEAT SINK
30 (2)NO HEAT SINK

25 (1)

20

15

10

5
(2)
0
0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE Ta ( C)




2007. 5. 22 Revision No : 0 3/3