Text preview for : irlsz34a.pdf part of Samsung irlsz34a . Electronic Components Datasheets Active components Transistors Samsung irlsz34a.pdf



Back to : irlsz34a.pdf | Home

Advanced Power MOSFET IRLSZ34A
FEATURES
BVDSS = 60 V
Logic Level Gate Drive
Avalanche Rugged Technology
RDS(on) = 0.046
Rugged Gate Oxide Technology ID = 20 A
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
TO-220F
Lower Leakage Current : 10