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NIF5002N
Preferred Device

Self-Protected FET
with Temperature and
Current Limit
42 V, 2.0 A, Single N-Channel, SOT-223
http://onsemi.com
HDPlust devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process V(BR)DSS
(Clamped) RDS(ON) TYP ID MAX
to achieve the lowest possible on-resistance per silicon area while
incorporating smart features. Integrated thermal and current limits 42 V 165 mW @ 10 V 2.0 A*
work together to provide short circuit protection. The devices feature *Max current limit value is dependent on input
an integrated Drain-to-Gate Clamp that enables them to withstand condition.
high energy in the avalanche mode. The Clamp also provides
Drain
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate-to-Source Clamp. Overvoltage MPWR
Gate Protection
Input RG
Features