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2SB766
PNP Silicon
Elektronische Bauelemente
Medium Power Transistor
RoHS Compliant Product
D
D1
A
SOT-89
E1
E
FEATURES b1
Power dissipation e
b
C
L
P CM : 500mW Tamb=25 e1
1.BASE
Collector current
2.COLLECTOR Dimensions In Millimeters Dimensions In Inches
Symbol
ICM : -1 A
3.EMITTER
Min Max Min Max
A 1.400 1.600 0.055 0.063
Collector-base voltage b 0.320 0.520 0.013 0.020
b1 0.360 0.560 0.014 0.022
VB(BR)CBO : -30 V c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
Operating and storage junction temperature range D1 1.400 1.800 0.055 0.071
E 2.300 2.600 0.091 0.102
TJ Tstg: -55 to +150 E1 3.940 4.250 0.155 0.167
e 1.500TYP 0.060TYP
e1 2.900 3.100 0.114 0.122
L 0.900 1.100 0.035 0.043
ELECTRICAL CHARACTERISTICS Tamb=25 unlessotherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-10 A, IE=0 -30 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-2mA, IB=0 -25 V
Emitter-base breakdown voltage V(BR)EBO IE=-10 A, IC=0 -5 V
Collector cut-off current ICBO VCB=-20V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-4V, IC=0 -0.1 A
hFE(1) VCE=-10V, IC=-500mA 85 340
DC current gain
hFE(2) VCE=-5V, IC=-1A 50
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.2 -0.4 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -0.85 -1.2 V
Transition frequency fT VCE=-10V, IC=-50mA, f=200MHz 200 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 20 30 pF
CLASSIFICATION OF hFE(1)
Rank Q R S
Range 85-170 120-240 170-340
Marking AQ AR AS
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 2
2SB766
PNP Silicon
Elektronische Bauelemente
Medium Power Transistor
PC Ta IC VCE VCE(sat) IC
1.4 -1.50 -100
IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)
Copper plate at the collector Ta = 25