ces2316.pdf part of CET ces2316 ces2316.pdf, . Electronic Components Datasheets Active components Transistors CET ces2316.pdf text manual preview

Text preview for : ces2316.pdf part of CET ces2316 . Electronic Components Datasheets Active components Transistors CET ces2316.pdf

Back to : ces2316.pdf | Home

CES2316
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 4.8A, RDS(ON) = 34m @VGS = 10V.
RDS(ON) = 50m @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Lead free product is acquired.
D
Rugged and reliable.
SOT-23 package.

G
D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS