Text preview for : 2sj334.pdf part of Toshiba 2sj334 . Electronic Components Datasheets Active components Transistors Toshiba 2sj334.pdf
Back to : 2sj334.pdf | Home
2SJ334
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV)
2SJ334
DC-DC Converter, Relay Drive and Motor Drive
Applications Unit: mm
4-V gate drive
Low drain-source ON-resistance : RDS (ON) = 29 m (typ.)
High forward transfer admittance : |Yfs| = 23 S (typ.)
Low leakage current : IDSS = -100 A (max) (VDS = -60 V)
Enhancement mode : Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
Absolute Maximum Ratings (Ta = 25