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STF11N65K3
N-channel 650 V, 0.765 , 11 A, TO-220FP
SuperMESH3TM Power MOSFET
Features
RDS(on)
Type VDSS ID Pw
max
STF10N65K3 650 V < 0.85 11 A 35 W
100% avalanche tested
Extremely high dv/dt capability 2
3
1
Gate charge minimized
TO-220FP
Very low intrinsic capacitances
Improved diode reverse recovery
characteristics
Zener-protected
Application Figure 1. Internal schematic diagram
Switching applications D(2)
Description
These devices are made using the
SuperMESH3TM Power MOSFET technology that
G(1)
is obtained via improvements applied to
STMicroelectronics' SuperMESHTM technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications. S(3)
AM01476v1
Table 1. Device summary
Order codes Marking Package Packaging
STF10N65K3 10N65K3 TO-220FP Tube
September 2010 Doc ID 17931 Rev 1 1/13
www.st.com 13
Contents STF11N65K3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ......................... 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 17931 Rev 1
STF11N65K3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain source voltage (VGS=0) 650 V
VGS Gate-source voltage