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Philips Semiconductors Objective specification

PowerMOS transistor PHX4N50E
Isolated version of PHP4N50E

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a full
pack, plastic envelope featuring high VDS Drain-source voltage 500 V
avalanche energy capability, stable ID Drain current (DC) 2.9 A
blocking voltage, fast switching and Ptot Total power dissipation 30 W
high thermal cycling performance RDS(ON) Drain-source on-state resistance 1.5
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.

PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION d
case

1 gate

2 drain
g
3 source
case isolated
1 2 3 s

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - 500 V
VDGR Drain-gate voltage RGS = 20 k - 500 V