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BC5347B
General Purpose Transistor
NPN Silicon COLLECTOR
3
3
1 1
BASE
*Moisture Sensitivity Level: 1 2
*ESD Rating - Human Body Model:>4000V 2 SOT-23
EMITTER
-Machine Model:>400V
M aximum R atings ( TA=25 C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 45 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base VOltage VEBO 6.0 Vdc
Collector Current-Continuous IC 100 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board PD
(Note 1.)TA=25 C 225 mW
Derate above 25 C 1.8 mW/ C
Thermal Resistance, Junction to Ambient (Note 1.) R JA 556 C/W
Total Device Dissipation Alumina
Substrate, (Note 2.) TA=25 C PD 300 mW
Derate above 25 C 2.4 mW/ C
Thermal Resistance, Junction to Ambient(Note 2.) R JA 417 C/W
Junction and Storage, Temperature Range TJ,Tstg -55 to +150 C
Device Marking
BC5347B=1F
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina
WE ITR O N
http://www.weitron.com.tw
BC5347B WE IT R ON
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics Symbol Min Typ Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage 45
V(BR)CEO - - V
(IC= 10mA)
Collector-Emitter Breakdown Voltage
V(BR)CES 50 - - V
(IC=10