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BUV298V
NPN TRANSISTOR POWER MODULE
s NPN TRANSISTOR
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s ISOLATED CASE (2500V RMS)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
Pin 4 not con nected
s MOTOR CONTROL
s SMPS & UPS
s WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CEV Collector-Emitter Voltage (V BE = -5 V) 1000 V
V CEO(sus) Collector-Emitter Voltage (I B = 0) 450 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 50 A
I CM Collector Peak Current (tp = 10 ms) 75 A
IB Base Current 10 A
I BM Base Peak Current (t p = 10 ms) 16 A
P t ot Total Dissipation at T c = 25 o C 250 W
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T stg St orage Temperature -55 to 150 C
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Tj Max. Operating Junction Temperature 150 C
V ISO Insulation W ithstand Voltage (AC-RMS) 2500 V
June 1997 1/7
BUV298V
THERMAL DATA
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R t hj-ca se Thermal Resistance Junction-case Max 0.5 C/W
R thc -h Thermal Resistance Case-heats ink With Conductive
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Grease Applied Max 0.05 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CER Collector Cut-off V CE = V CEV 0.4 mA
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Current (R BE = 5 ) V CE = V CEV T j = 100 C 2 mA
I CEV Collector Cut-off V CE = V CEV 0.4 mA
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Current (V BE = -5V) V CE = V CEV T j = 100 C 2 mA
I EBO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
V CEO(SUS) * Collector-Emitter I C = 0.2 A L = 25 mH 450 V
Sustaining Voltage V c la mp = 450 V
hFE DC Current G ain I C = 32 A V CE = 5 V 12
V CE(sat ) Collector-Emitter I C = 32 A I B = 6.4 A 0.35 1.2 V
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Saturation Voltage I C = 32 A I B = 6.4 A T j = 100 C 0.6 2 V
V BE(s at) Base-Emitter I C = 32 A I B = 6.4 A 1 1.5 V
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Saturation Voltage I C = 32 A I B = 6.4 A T j = 100 C 0.9 1.5 V
di C /dt Rate of Rise of V CC = 300 V R C = 0 tp = 3