Text preview for : bc556-557-558.pdf part of LGE bc556-557-558 . Electronic Components Datasheets Active components Transistors LGE bc556-557-558.pdf
Back to : bc556-557-558.pdf | Home
BC556/557/558(PNP)
TO-92 Bipolar Transistors
1. COLLECTOR
TO-92
2. BASE
3. EMITTER
Features
High Voltage
Complement to BC546/BC547/BC548
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
Collector-Base Voltage BC556 -80
VCBO BC557 -50 V
BC558 -30
-65
VCEO Collector-Emitter Voltage -45 V
-30
VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters)
IC Collector Current -Continuous -100 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage BC556 -80
BC557 VCBO IC= -100A, IE=0 -50 V
BC558 -30
Collector-emitter breakdown voltage BC556 -65
BC557 VCEO IC= -2mA , IB=0 -45 V
BC558 -30
Emitter-base breakdown voltage VEBO IE= -100A, IC=0 -5 V
Collector cut-off current BC556 VCB=- 70 V, IE=0
BC557 ICBO VCB= -45 V, IE=0 -0.1 A
BC558 VCB= -25V, IE=0
Collector cut-off current BC556 VCE= -60 V, IB=0
BC557 ICEO VCE= -40 V, IB=0 -0.1 A
BC558 VCE= -25 V, IB=0
Emitter cut-off current BC556
BC557 IEBO VEB= -5 V, IC=0 -0.1 A
BC558
DC current gain BC556 120 800
BC557 120 800
BC558 120 800
hFE VCE=-5V, IC= -2mA
BC557A 120 220
BC556B/BC557B/BC558B 180 460
BC557C 420 800
Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB= -5mA -0.65 V
Base-emitter saturation voltage VBE(sat) IC= -100mA, IB=-5mA -1 V
VCE= -5V, IC= -10mA
Transition frequency fT 150 MHz
f = 100MHz
BC556/557/558(PNP)
TO-92 Bipolar Transistors
Typical Characteristics
BC556/557/558(PNP)
TO-92 Bipolar Transistors
BC556/557/558(PNP)
TO-92 Bipolar Transistors