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BUX98AP
HIGH POWER NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
APPLICATIONS
s HIGH FREQUENCY AND EFFICENCY
CONVERTERS 3
s LINEAR AND SWITCHING INDUSTRIAL 2
1
EQUIPMENT
DESCRIPTION TO-218 (SOT-93)
The BUX98AP is a silicon multiepitaxial mesa
NPN transistor in jedec TO-218 plastic package,
intended for use in industrial applications from
single and three-phase mains operation.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CER Collector-Emitter Voltage (R BE = 10 ) 1000 V
V CES Collector-Base Voltage (V BE = 0) 1000 V
V CEO Collector-Emitter Voltage (I B = 0) 450 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 24 A
I CM Collector Peak Current (tp < 5 ms) 36 A
IB Base Current 5 A
I BM Base Peak Current (t p < 5 ms) 8 A
P tot Total Power Dissipation at T case < 25 o C 200 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max Operating Junction Temperature 150 C
June 1997 1/4
BUX98AP
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 0.63 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER Collector Cut-off V CE = V CES 1