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PXT8050
SOT-89 Transistor(NPN)
1. BASE
2. COLLECTOR
3. EMITTER SOT-89
4.6
B
Features
4.4
1.6
1.8
1.4 1.4
Compliment to PXT8550 2.6 4.25
2.4 3.75
MARKING: Y1 0.8
MIN
0.53
0.44 0.48 0.40
MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.37
0.13 B 0.35
2x)
1.5
3.0
Symbol Parameter Value Units
Dimensions in inches and (millimeters)
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 1.5 A
PC Collector Power dissipation 0.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100uA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 A
Emitter cut-off current ICEO VCE=20V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
hFE(1) VCE=1V, IC=100mA 85 400
DC current gain
hFE(2) VCE=1V, IC=800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V
Base-emitter voltage VBE VCE=1V, IC=10mA 1 V
Base-emitter positive favor voltage VBEF IB=1A 1.55 V
Transition frequency fT VCE=10V,IC=50mA,f=30MHz 100 MHz
output capacitance Cob VCB=10V,IE=0,f=1MHz 15 pF
CLASSIFICATION OF hFE(1)
Rank B C D D3
Range 85-160 120-200 160-300 300-400
PXT8050
SOT-89 Transistor(NPN)
Typical Characteristics