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2N4403(PNP)
TO-92 Bipolar Transistors

1. EMITTER
TO-92
2. BASE

3. COLLECTOR

Features
Power dissipation

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -40 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -600 mA
PC Collector Power dissipation 0.625 W
TJ Junction Temperature 150 Dimensions in inches and (millimeters)
Tstg Storage Temperature -55 to +150
RJA Thermal Resistance, junction to Ambient 357 /mW

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-35V,IE=0 -100 nA
Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA
hFE(1) VCE=-1V,IC=-0.1mA 30
hFE(2) VCE=-1V,IC=-1mA 60
DC current gain hFE(3) VCE=-1V,IC=-10mA 100
hFE(4) VCE=-1V,IC=-150mA 100 300
hFE(5) VCE=-2V,IC=-500mA 20
VCE(sat)1 IC=-150mA,IB=-15mA -0.4 V
Collector-emitter saturation voltage
VCE(sat)2 IC=-500mA,IB=-50mA -0.75 V
VBE(sat)1 IC=-150mA,IB=-15mA -0.75 -0.95 V
Base-emitter saturation voltage
VBE(sat)2 IC=-500mA,IB=-50mA -1.3 V
Transition frequency fT VCE=-10V,IC=-20mA,f=100MHz 200 MHz
Collector capacitance Cob VCB=-10V,IE=0,f=100KHz 8.5 pF
Delay time td 15 nS
Rise time tr VCC=-30V, IC=-150mA 20 nS
Storage time tS IB1=- IB2=-15mA 225 nS
Fall time tf 30 nS
2N4403(NPN)
TO-92 Bipolar Transistors

Typical Characteristics