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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW29
VHF power transistor
Product specification August 1986
Philips Semiconductors Product specification
VHF power transistor BLW29
DESCRIPTION the chain can deliver 15 W with a
maximum drive power of 120 mW at
N-P-N silicon planar epitaxial
175 MHz. The transistor is resistance
transistor intended for use in class-A,
stabilized and is guaranteed to
B or C operated mobile transmitters
withstand severe load mismatch
with a nominal supply voltage of
conditions with a supply over-voltage
13,5 V. Because of the high gain and
to 16,5 V.
excellent power handling capability,
the transistor is especially suited for It has a 3/8" capstan envelope with a
design of wide-band and ceramic cap. All leads are isolated
semi-wide-band v.h.f. amplifiers. from the stud.
Together with a BFQ42 driver stage,
QUICK REFERENCE DATA
R.F. performance up to Th = 25