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SEMICONDUCTOR KTA1270
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B C
FEATURES
Excellent hFE Linearity
A
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.
Complementary to KTC3202. N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
J
D 0.45
E 1.00
F 1.27
MAXIMUM RATING (Ta=25 ) G 0.85
H 0.45
J _
14.00 + 0.50
CHARACTERISTIC SYMBOL RATING UNIT H
F F K 0.55 MAX
L 2.30
Collector-Base Voltage VCBO -35 V +0.10
M 0.30 - 0.05
N 1.00
Collector-Emitter Voltage VCEO -30 V
C
1 2 3
L
M
Emitter-Base Voltage VEBO -5 V 1. EMITTER
2. COLLECTOR
Collector Current IC -500 mA 3. BASE
Base Current IE 500 mA
Collector Power Dissipation PC 625 mW TO-92
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
hFE(1) (Note) VCE=-1V, IC=-100mA 70 - 240
DC Current Gain
hFE(2) (Note) VCE=-6V, IC=-400mA 25 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA - -0.1 -0.25 V
Base-Emitter Voltage VBE VCE=-1V, IC=-100mA - -0.8 -1.0 V
Transition Frequency fT VCE=-6V, IC=-20mA - 200 - MHz
Collector Output Capacitance Cob VCB=-6V, IE=0, f=1MHz - 13 - pF
Note : hFE(1) Classification 0:70 140, Y:120 240
hFE(2) Classification 0:25Min., Y:40Min.
2007. 6. 8 Revision No : 1 1/2
KTA1270
IC - VCE hFE - IC
COLLECTOR CURRENT IC (mA)
-600 1k
COMMON COMMON EMITTER
-8 -7 -6 -5 EMITTER
DC CURRENT GAIN hFE
-500 500
Ta=25 C
300
-4 Ta=100 C VCE =-6V
-400
Ta=25 C
-3
-300 100 Ta=-25 C
-2 VCE =-1V
-200 50
I B =-1mA
30
-100
0
0 10
0 -1 -2 -3 -4 -5 -0.3 -1 -3 -10 -30 -100 -300 -1k
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)
VCE(sat) - IC IB - VBE
COLLECTOR-EMITTER SATURATION
-3 -3k
COMMON EMITTER COMMON
BASE CURRENT IB (