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SEMICONDUCTOR KF15N50N
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description
A
This planar stripe MOSFET has better characteristics, such as fast N Q B
O K
switching time, low on resistance, low gate charge and excellent
DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for switching mode _
F
A 15.60 + 0.20
B _
4.80 + 0.20
power supplies. C _
19.90 + 0.20
C
J
R
D _
2.00 + 0.20
I
H
d _
1.00 + 0.20
E _
3.00 + 0.20
F _
3.80 + 0.20
FEATURES
G
G _
3.50 + 0.20
D H _
13.90 + 0.20
VDSS(Min.)= 500V, ID= 15A E _
I 12.76 + 0.20
Drain-Source ON Resistance : J _
23.40 + 0.20
L
d M K 1.5+0.15-0.05
RDS(ON)=0.42(Max.) @VGS =10V L _
16.50 + 0.30
M _
1.40 + 0.20
Qg(typ.) =35nC N _
13.60 + 0.20
P P T
O _
9.60 + 0.20
P _
5.45 + 0.30
Q _
3.20 + 0.10
1 2 3 _
R 18.70 + 0.20
MAXIMUM RATING (Tc=25 ) T 0.60+0.15-0.05
1. Gate
CHARACTERISTIC SYMBOL RATING UNIT 2. Drain
3. Source
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS