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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU1706AB

GENERAL DESCRIPTION
High-voltage, high-speed switching npn transistor in a plastic envelope suitable for surface mounting, intended for
use in high frequency electronic lighting ballast applications.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1750 V
VCEO Collector-emitter voltage (open base) - 850 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 8 A
Ptot Total power dissipation Tmb 25