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Silicon N Channel MOS FET Triode BF 543
Preliminary Data
q For RF stages up to 300 MHz
preferably in FM applications
q IDSS = 4 mA, gfs = 12 mS
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Marking Ordering Code Pin Configuration Package1)
(tape and reel) 1 2 3
BF 543 LDs Q62702-F1372 G D S SOT-23
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 20 V
Drain current ID 30 mA
Gate-source peak current