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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG17A
NPN 3 GHz wideband transistor
Product specification 1995 Sep 12
File under Discrete Semiconductors, SC14
Philips Semiconductors Product specification
NPN 3 GHz wideband transistor BFG17A
DESCRIPTION PINNING
NPN wideband transistor in a PIN DESCRIPTION
microminiature plastic SOT143 4
handbook, 2 columns 3
Code: E6
surface mounting envelope with
double emitter bonding. 1 collector
2 base
It is intended for use in wideband
aerial amplifiers using SMD 3 emitter 1 2
technology. 4 emitter
Top view MSB014
Fig.1 SOT143.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter - - 25 V
VCEO collector-emitter voltage open base - - 15 V
IC DC collector current - - 50 mA
Ptot total power dissipation up to Ts = 85