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SEMICONDUCTOR BCX19
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURE L B L
DIM MILLIMETERS
Super Mini Packaged Transistors for Hybrid Circuits. A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 0.45+0.15/-0.05
D
A
G
E 2.40+0.30/-0.20
H
1 G 1.90
H 0.95
MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05
K 0.00 ~ 0.10
CHARACTERISTIC SYMBOL RATING UNIT L 0.55
P P
M 0.20 MIN
Collector-Base Voltage VCEO 50 V N 1.00+0.20/-0.10
N
C
P 7
J
Collector-Emitter Voltage VCEO 45 V
M
K
Emitter-Base Voltage VEBO 5 V
Collector Current IC 500 mA 1. EMITTER
2. BASE
Emitter Current IE -500 mA
3. COLLECTOR
Collector Power Dissipation PC 200 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -65 150 SOT-23
Marking
Lot No.
Type Name
U1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 45 - - V
Collector-Emitter Breakdown Voltage V(BR)CES IC=10 A, VBE=0 50 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A, IC=0 5.0 - - V
VCB=20V, IE=0 - - 100 nA
Collector Cut-off Current ICBO
Ta=150 , VCB=20V, IE=0 - - 5.0 A
VCE=1V, IC=100mA 100 - 600
DC Current Gain hFE VCE=1V, IC=300mA 70 - -
VCE=1V, IC=500mA 40 - -
Base-Emitter Voltage VBE(ON) VCE=1V, IC=500mA - - 1.2 V
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 0.62 V
Transition Frequency fT IC=10mA, VCE=5V, f=100MHz - 200 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 6.0 - pF
1999. 11. 30 Revision No : 2 1/1