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CEM26138
Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES

30V, 7.6A, RDS(ON) = 22m @VGS = 10V.
RDS(ON) = 33m @VGS = 4.5V.

20V, 6A, RDS(ON) = 27m @VGS = 4.5V.
RDS(ON) = 40m @VGS = 2.5V.

Super high dense cell design for extremely low RDS(ON). D1 D1 D2 D2
8 7 6 5
High power and current handing capability.

Lead-free plating ; RoHS compliant.

Surface mount Package.

SO-8
1 2 3 4
1 S1 G1 S2 G2

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Channel 1 Channel 2 Units
Drain-Source Voltage VDS 30 20 V
Gate-Source Voltage VGS