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VNP28N04
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
TYPE V clamp R DS(on) I lim
VNP28N04 42 V 0.035 28 A
s LINEAR CURRENT LIMITATION
s THERMAL SHUT DOWN
s SHORT CIRCUIT PROTECTION
s INTEGRATED CLAMP
s LOW CURRENT DRAWN FROM INPUT PIN
s DIAGNOSTIC FEEDBACK THROUGH INPUT 3
PIN 2
1
s ESD PROTECTION
s DIRECT ACCESS TO THE GATE OF THE
TO-220
POWER MOSFET (ANALOG DRIVING)
s COMPATIBLE WITH STANDARD POWER
MOSFET
s STANDARD TO-220 PACKAGE
DESCRIPTION
The VNP28N04 is a monolithic device made tation and overvoltage clamp protect the chip
using STMicroelectronics VIPower Technology, in harsh enviroments.
intended for replacement of standard power Fault feedback can be detected by monitoring the
MOSFETS in DC to 50 KHz applications. voltage at the input pin.
Built-in thermal shut-down, linear current limi-
BLOCK DIAGRAM
March 2004 1/11
VNP28N04
ABSOLUTE MAXIMUM RATING
Symbol Parameter Value Unit
V DS Drain-source Voltage (V in = 0) Internally Clamped V
V in Input Voltage 18 V
ID Drain Current Internally Limited A
IR Reverse DC Output Current -28 A
V esd Electrostatic Discharge (C= 100 pF, R=1.5 K) 2000 V
o
Ptot Total Dissipation at T c = 25 C 83 W
o
Tj Operating Junction Temperature Internally Limited C
o
Tc Case Operating Temperature Internally Limited C
o
T stg Storage Temperature -55 to 150 C
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.5 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V CLAMP Drain-source Clamp I D = 200 mA V in = 0 36 42 48 V
Voltage
V CLTH Drain-source Clamp I D = 2 mA V in = 0 35 V
Threshold Voltage
V INCL Input-Source Reverse I in = -1 mA -1 -0.3 V
Clamp Voltage
I DSS Zero Input Voltage V DS = 13 V V in = 0 50