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SUM23N15-73
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
FEATURES
D TrenchFETr Power MOSFETS
PRODUCT SUMMARY D 175_C Junction Temperature
D New Low Thermal Resistance Package
V(BR)DSS (V) rDS(on) (W) ID (A) D PWM Optimized
0.073 @ VGS = 10 V 23
150 APPLICATIONS
0.077 @ VGS = 6 V 22.5
D Primary Side Switch
D
TO-263
G
G D S
Top View
S
Ordering Information: SUM23N15-73 N-Channel MOSFET
SUM23N15-73
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 150
Gate-Source Voltage VGS "20 V
TC = 25_C 23
Continuous Drain Current (TJ = 175_C) ID
TC = 125_C 13.4
A
Pulsed Drain Current IDM 35
Avalanche Current IAR 25
Repetitive Avalanche Energya L = 0.1 mH EAR 31 mJ
TC = 25_C 100b
Maximum Power Dissipationa PD W
TA = 25_Cc 3.75
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Junction-to-Ambient (PCB Mount)c RthJA 40
_C/W
Junction-to-Case (Drain) RthJC 1.5
Notes
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 72143 www.vishay.com
S-03535--Rev. A, 24-Mar-03 1
SUM23N15-73
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 150
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 4
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 120 V, VGS = 0 V 1
Zero Gate Voltage Drain Current
g IDSS VDS = 120 V, VGS = 0 V, TJ = 125_C 50 m
mA
VDS = 120 V, VGS = 0 V, TJ = 175_C 250
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 35 A
VGS = 10 V, ID = 15 A 0.059 0.073
VGS = 10 V, ID = 15 A, TJ = 125_C 0.140
Drain Source On State Resistancea
Drain-Source On-State rDS( )
DS(on) W
VGS = 10 V, ID = 15 A, TJ = 175_C 0.168
VGS = 6 V, ID = 10 A 0.062 0.077
Forward Transconductancea gfs VDS = 15 V, ID = 25 A 10 S
Dynamicb
Input Capacitance Ciss 1290
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 160 pF
Reverse Transfer Capacitance Crss 70
Total Gate Chargec Qg 22 35
Gate-Source Chargec Qgs VDS = 75 V, VGS = 10 V, ID = 23 A
, , 6 nC
Gate-Drain Chargec Qgd 7.5
Gate Resistance RG 4.0 W
Turn-On Delay Timec td(on) 10 15
Rise Timec tr VDD = 75 V, RL = 3.26 W 60 90
ID ^ 23 A, VGEN = 10 V, RG = 2.5 W ns
Turn-Off Delay Timec td(off) 30 43
Fall Timec tf 45 70
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current IS 35
A
Pulsed Current ISM 23
Forward Voltagea VSD IF = 23 A, VGS = 0 V 1.0 1.5 V
Reverse Recovery Time trr 100 150 ns
Peak Reverse Recovery Current IRM(REC) IF = 23 A, di/dt = 100 A/ms 5 8 A
Reverse Recovery Charge Qrr 0.25 0.6 mC
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com Document Number: 72143
2 S-03535--Rev. A, 24-Mar-03
SUM23N15-73
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
35 35
VGS = 10 thru 6 V
30
28
I D - Drain Current (A)
I D - Drain Current (A)
25
21
20
15
14
10 5V TC = 125_C
7
5 25_C
4V - 55_C
0 0
0 3 6 9 12 15 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Transconductance On-Resistance vs. Drain Current
50 0.12
TC = - 55_C
40
r DS(on) - On-Resistance ( W )
25_C 0.09
g fs - Transconductance (S)
VGS = 6 V
30 125_C
0.06
20 VGS = 10 V
0.03
10
0 0.00
0 5 10 15 20 25 30 0 5 10 15 20 25 30 35
ID - Drain Current (A) ID - Drain Current (A)
Capacitance Gate Charge
2000 20
VDS = 75 V
V GS - Gate-to-Source Voltage (V)
1600 16 ID = 23 A
C - Capacitance (pF)
Ciss
1200 12
800 8
400 4
Crss
Coss
0 0
0 30 60 90 120 150 0 8 16 24 32 40
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Document Number: 72143 www.vishay.com
S-03535--Rev. A, 24-Mar-03 3
SUM23N15-73
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
2.7 100
VGS = 10 V
2.4
ID = 15 A
2.1
r DS(on) - On-Resistance (W)
I S - Source Current (A)
1.8
(Normalized)
1.5 TJ = 150_C TJ = 25_C
10
1.2
0.9
0.6
0.3
0.0 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
190
180 ID = 1.0 mA
(BR)DSS (V)
170
V
160
150
140
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
www.vishay.com Document Number: 72143
4 S-03535--Rev. A, 24-Mar-03
SUM23N15-73
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
25 100
Limited
by rDS(on)
10 ms
20 100 ms
I D - Drain Current (A)
I D - Drain Current (A)
10
15
1 ms
10
10 ms
1
100 ms
5 TC = 25_C
Single Pulse dc
0 0.1
0 25 50 75 100 125 150 175 0.1 1 10 100 1000
TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1 Duty Cycle = 0.5
Normalized Effective Transient
0.2
Thermal Impedance
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
Document Number: 72143 www.vishay.com
S-03535--Rev. A, 24-Mar-03 5
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1