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MMBTA44
High-Voltage NPN Transistor COLLECTOR
3 SOT-23
Surface Mount 1
3
BASE
1
2
2
EMITTER
Maximum Ratings
Rating Symbol Value Unit
C ollector-E mitter V oltage VCEO 400 Vdc
C ollector-B as e V oltage VCBO 450 Vdc
E mitter-B as e V Oltage VEBO 6.0 Vdc
C ollector C urrent-C ontinuous IC 300 mAdc
Thermal Characteristics
Characteristics Symbol Max Unit
Total Device Dissipation FR-5 Board (1) 225 mW
TA=25 C PD
Derate above 25 C 1.8 mW/ C
Thermal Resistance, Junction to Ambient R JA 556 C/W
Total Device Dissipation 350 mW
Alumina Substrate, (2) TA=25 C PD
Derate above 25 C 2.8 mW/ C
Thermal Resistance, Junction to Ambient R JA 357 C/W
Junction and Storage, Temperature TJ,Tstg -55 to +150 C
Device Marking
MMBTA44=3D
Electrical Characteristics (T A =25 C Unles s Otherwis e noted)
Characteristics Symbol Min Max Unit
Off Characteristics
Collector-Emitter Breakdown Voltage(3) (IC=1.0mAdc.IB=0) V(BR)CEO 400 - Vdc
Collector-Base Breakdown Voltage (IC=100 uAdc, IE=0) V(BR)CBO 450 - Vdc
Emitter-Base Breakdown Voltage (IE=10 uAdc, IC=0) V(BR)EBO 6.0 - Vdc
Base Cutoff Current (VCB=400 Vdc, IE=0) ICBO - 100 nAdc
Emitter Cutoff Current VEB=4V, IC=0 IEBO - 100 nAdc
1.FR-5=1.0 x 0.75 x 0.062 in.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
3.Pulse Test:Pulse Width 300