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KTC4372

TRANSISTOR (NPN)
SOT-89-3L

FEATURES
Small Flat Package 1. BASE
High Voltage Switching Application
2. COLLECTOR
High Voltage
High Transition Frequency 3. EMITTER

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 200 V
VCEO Collector-Emitter Voltage 150 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 50 mA
PC Collector Power Dissipation 500 mW
RJA Thermal Resistance From Junction To Ambient 250 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55~+150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC= 0.1mA,IE=0 200 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 150 V
Emitter-base breakdown voltage V(BR)EBO IE=0.1mA,IC=0 5 V
Collector cut-off current ICBO VCB=200V,IE=0 100 nA
Emitter cut-off current IEBO VEB=5V,IC=0 100 nA
DC current gain hFE VCE=5V, IC=10mA 70 240
Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.5 V
Base-emitter voltage VBE VCE=5V, IC=30mA 1 V
Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 5 pF
Transition frequency fT VCE=30V,IC= 10mA 120 MHz

CLASSIFICATION OF hFE
RANK O Y
RANGE 70