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2SA933AS
TO-92S Transistor (PNP)
1. EMITTER TO-92S
2. COLLECTOR
123 3. BASE
Features
Excellent hFE linearity
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -150 mA
PC Collector Power dissipation 300 mW
Dimensions in inches and (millimeters)
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -6 V
Collector cut-off current ICBO VCB=-60V, IE=0 -0.1 A
Emitter cut-off current IEBO VEB= -6V, IC=0 -0.1 A
DC current gain hFE VCE=-6 V, IC= -1mA 120 560
Collector-emitter saturation voltage VCEsat IC= -50mA, IB=-5mA -0.5 V
VCE=-12V, IC=-2mA
Transition frequency fT 140 MHz
f=30MHz
Collector output capacitance Cob VCB=-12V, IC=0, f=1MHz 4 5 pF
CLASSIFICATION OF hFE
Rank Q R S
Range 120-270 180-390 270-560
2SA933AS
TO-92S Transistor (PNP)
Typical characteristics