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2N7002W
Mosfet(N-Channel)

SOT-323
1. GATE
2. SOURCE
3. DRAIN

Features
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability

Marking: K72

Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VDS Drain-Source voltage 60 V
ID Drain Current 115 mA
PD Power Dissipation 225 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
VGS=0 V, ID=10 A 60
Drain-Source Breakdown Voltage V(BR)DSS
VGS=0 V, ID=3mA 60 V
Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 A 1 2.5
Gate-body Leakage lGSS VDS=0 V, VGS=