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BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 01 -- 2 February 2005 Product data sheet

1. Product profile

1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package.

1.2 Features
s High power gain
s Low noise figure
s High transition frequency
s Gold metallization ensures excellent reliability

1.3 Applications
s Intended for Radio Frequency (RF) front end applications in the GHz range, such as:
x analog and digital cellular telephones
x cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
x radar detectors
x pagers
x Satellite Antenna TeleVision (SATV) tuners

1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCBO collector-base voltage open emitter - - 15 V
VCEO collector-emitter voltage open base - - 6 V
IC collector current (DC) - - 10 mA
Ptot total power dissipation Tsp 145