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CES2320
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 5.2A, RDS(ON) = 29m (typ) @VGS = 10V.
RDS(ON) = 45m (typ) @VGS = 4.5V.
High dense cell design for extremely low RDS(ON).
Lead free product is acquired.
D
Rugged and reliable.
SOT-23 package.

G
D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS