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SEMICONDUCTOR KTC4076
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES M B M
Excellent hFE Linearity DIM MILLIMETERS
A _
2.00 + 0.20
D
: hFE(2)=25(Min.) at VCE=6V, IC=400mA. 2 B _
1.25 + 0.15
_
A
0.90 + 0.10
J
C
Complementary to KTA2015. 1 3
G
D 0.3+0.10/-0.05
E _
2.10 + 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00-0.10
MAXIMUM RATING (Ta=25 ) L 0.70
C
H _
L
M 0.42 + 0.10
CHARACTERISTIC SYMBOL RATING UNIT N N
N 0.10 MIN
K
Collector-Base Voltage VCBO 35 V
Collector-Emitter Voltage VCEO 30 V 1. EMITTER
2. BASE
Emitter-Base Voltage VEBO 5 V
3. COLLECTOR
Collector Current IC 500 mA
Base Current IB 50 mA
Collector Power Dissipation PC 100 mW USM
Junction Temperature Tj 150