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SEMICONDUCTOR KTB1366
TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
F
Low Collector Saturation Voltage S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
: VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. E
C _
2.70 + 0.3
B
Collector Power Dissipation D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
: PC=25W (Tc=25 ) F _
3.0 + 0.3
G _
12.0 + 0.3
Complementary to KTD2058. H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
P _
6.8 + 0.1
MAXIMUM RATING (Ta=25 ) _
4.5 + 0.2
Q
R _
2.6 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT N N H S 0.5 Typ
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
1. BASE
Q
1 2 3
Emitter-Base Voltage VEBO -7 V 2. COLLECTOR
3. EMITTER
Collector Current IC -3 A
Base Current IB -0.5 A
TO-220IS
Collector Power Ta=25 2
PC W
Dissipation Tc=25 25
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-60V, IE=0 - - -100 A
Emitter Cut-off Current IEBO VEB=-7V, IC=0 - - -100 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-50mA, IB=0 -60 - - V
hFE(1) (Note) VCE=-5V, IC=-0.5A 60 - 200
DC Current Gain
hFE(2) VCE=-5V, IC=-3A 20 - -
Collector Emitter Saturation Voltage VCE(sat) IC=-2A, IB=-0.2A - -0.25 -1.0 V
Base-Emitter Voltage VBE VCE=-5V, IC=-0.5A - -0.7 -1.0 V
Transition Frequency fT VCE=-5V, IC=-0.5A - 9 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 150 - pF
OUTPUT
Turn-on Time ton - 0.4 -
I B2 I B1
0
INPUT
Switching IB1
15
Storage Time tstg I B2
- 1.7 - S
Time
20