Text preview for : mmbta42.pdf part of UTC mmbta42 . Electronic Components Datasheets Active components Transistors UTC mmbta42.pdf



Back to : mmbta42.pdf | Home

UTC MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR

DESCRIPTION
The UTC MMBTA42 are high voltage transistors,
designed for telephone switch and high voltage
switch.


FEATURES 1
*Collector-Emitter voltage:
VCEO=300V(UTC MMBTA42)
*High current gain
*Collector Dissipation:
Pc(max)=625mW



SOT-23




1:EMITTER 2:BASE 3:COLLECTOR


ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
UTC MMBTA42 VCBO 300
Collector-Emitter Voltage V
UTC MMBTA42 VCEO 300
Emitter-Base Voltage VEBO 6 V
Collector Dissipation Pc 625 mW
Collector Current Ic 500 mA
Junction Temperature Tj 150