Text preview for : stb30nf10.pdf part of ST stb30nf10 . Electronic Components Datasheets Active components Transistors ST stb30nf10.pdf
Back to : stb30nf10.pdf | Home
STB30NF10
STP30NF10 STP30NF10FP
N-CHANNEL 100V - 0.038 - 35A TO-220/TO-220FP/D2PAK
LOW GATE CHARGE STripFETTM II POWER MOSFET
TYPE VDSS RDS(on) ID
STB30NF10 100 V <0.045 35 A
STP30NF10 100 V <0.045 35 A
STP30NF10FP 100 V <0.045 18 A
s TYPICAL RDS(on) = 0.038 3
3 1
s EXCEPTIONAL dv/dt CAPABILITY 1
2
s 100% AVALANCHE TESTED D2PAK
TO-220FP TO-263
s APPLICATION ORIENTED
CHARACTERIZATION (Suffix "T4")
s SURFACE-MOUNTING D2PAK (TO-263)
3
POWER PACKAGE IN TUBE (NO SUFFIX) OR 1
2
IN TAPE & REEL (SUFFIX "T4")
TO-220
DESCRIPTION
This Power MOSFET is the latest development of INTERNAL SCHEMATIC DIAGRAM
STMicroelectronis unique "Single Feature SizeTM"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STB30NF10
STP30NF10FP
STP30NF10
VDS Drain-source Voltage (VGS = 0) 100 V
VDGR Drain-gate Voltage (RGS = 20 k) 100 V
VGS Gate- source Voltage