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MJD127(NPN)
TO-251/TO-252-2L Transistor

TO-251
1. BASE

2. COLLECTOR

3. EMITTER

1 2 3

Features
High DC current gain
Electrically similar to popular TIP127
Built-in a damper diode at E-C
TO-252-2L
MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -100 V
VCEO Collector-Emitter Voltage -100 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -8 A
PC Collector Power Dissipation 1.5 W
TJ Junction Temperature 150
Dimensions in inches and (millimeters)
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-1mA,IE=0 -100 V
Collector-emitter breakdown voltage V(BR)CEO IC=-30mA,IB=0 -100 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V
Collector cut-off current ICBO VCB=-100V,IE=0 -10