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SEMICONDUCTOR
TECHNICAL DATA
KGT15N120KDA
General Description
KEC NPT Trench IGBTs offer low switching losses, high energy
efficiency and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
FEATURES
High speed switching
High system efficiency
Short Circuit Withstand Times 10us
Extremely enhanced avalanche capability
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES 20 V
@TC=25 30 A
Collector Current IC
@TC=100 15 A
Pulsed Collector Current ICM* 45 A
Diode Continuous Forward Current @TC=100 IF 15 A
Diode Maximum Forward Current IFM 45 A
@TC=25 200 W
Maximum Power Dissipation PD
@TC=100 80 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to + 150
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
E
CHARACTERISTIC SYMBOL MAX. UNIT C
G
Thermal Resistance, Junction to Case (IGBT) Rt h JC 0.6 /W
Thermal Resistance, Junction to Case (DIODE) Rt h JC 2.8 /W
Thermal Resistance, Junction to Ambient Rt h JA 40 /W
2011. 5. 25 Revision No : 0 1/8
KGT15N120KDA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Collector-Emitter Breakdown Voltage BVCES VGE=0V , IC=1.0mA 1200 - - V
Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 1.0 mA
Gate Leakage Current IGES VCE=0V, VGE= 20V - - 100 nA
Gate Threshold Voltage VGE(th) VGE=VCE, IC=15mA 4.0 5.5 7.0 V
VGE=15V, IC=15A - 1.90 2.30 V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V, IC=15A, TC = 125 - 2.25 - V
VGE=15V, IC=30A - 2.35 - V
Dynamic
Total Gate Charge Qg - 115 170 nC
Gate-Emitter Charge Qge VCC=600V, VGE=15V, IC= 15A - 13 - nC
Gate-Collector Charge Qgc - 40 - nC
Turn-On Delay Time td(on) - 50 - ns
Rise Time tr - 30 - ns
Turn-Off Delay Time td(off) - 260 - ns
VCC=600V, IC=15A, VGE=15V,RG=10
Fall Time tf - 100 180 ns
Inductive Load, TC = 25
Turn-On Switching Loss Eon - 2.7 4.0 mJ
Turn-Off Switching Loss Eoff - 0.55 0.90 mJ
Total Switching Loss Ets - 3.25 4.90 mJ
Turn-On Delay Time td(on) - 50 - ns
Rise Time tr - 30 - ns
Turn-Off Delay Time td(off) - 270 - ns
VCC=600V, IC=15A, VGE=15V, RG=10
Fall Time tf - 150 - ns
Inductive Load, TC = 125
Turn-On Switching Loss Eon - 2.9 4.2 mJ
Turn-Off Switching Loss Eoff - 0.8 1.2 mJ
Total Switching Loss Ets - 3.7 5.4 mJ
Input Capacitance Cies - 1900 - pF
Ouput Capacitance Coes VCE=30V, VGE=0V, f=1MHz - 80 - pF
Reverse Transfer Capacitance Cres - 55 - pF
Short Circuit Withstand Time tsc VCC=600V, VGE=15V, TC=100 10 - - s
Marking
2011. 5. 25 Revision No : 0 2/8
KGT15N120KDA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
TC=25 - 1.8 2.5
Diode Forward Voltage VF IF = 15A V
TC=125 - 1.9 -
TC=25 - 230 300
Diode Reverse Recovery Time trr ns
TC=125 - 270 -
IF = 15A TC=25 - 24 31
Diode Peak Reverse Recovery Current Irr A
di/dt = 200A/ s TC=125 - 27 -
TC=25 - 2400 4000
Diode Reverse Recovery Charge Qrr nC
TC=125 - 3640 -
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KGT15N120KDA
Typical Performance Characteristics
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KGT15N120KDA
Typical Performance Characteristics (Continued)
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KGT15N120KDA
Typical Performance Characteristics (Continued)
2011. 5. 25 Revision No : 0 6/8
KGT15N120KDA
Typical Performance Characteristics
2011. 5. 25 Revision No : 0 7/8
KGT15N120KDA
Definition Switching Time & Loss.
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