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SEMICONDUCTOR KU035N06P
TECHNICAL DATA N-ch Trench MOS FET
General Description
This Trench MOSFET has better characteristics, such as fast A
O
C
switching time, low on resistance, low gate charge and excellent
F
avalanche characteristics. It is mainly suitable for DC/DC Converter,
E G DIM MILLIMETERS
Synchronous Rectification and a load switch in battery powered A _
9.9 + 0.2
B
B 15.95 MAX
applications Q C 1.3+0.1/-0.05
I D _
0.8 + 0.1
E _
3.6 + 0.2
FEATURES K _
P F 2.8 + 0.1
VDSS= 60V, ID= 160A M G 3.7
L
H 0.5+0.1/-0.05
Drain-Source ON Resistance : J I 1.5
RDS(ON)=3.5m (Max.) @VGS = 10V D J _
13.08 + 0.3
N N H K 1.46
L _
1.4 + 0.1
MAXIMUM RATING (Tc=25 ) M _
1.27 + 0.1
N _
2.54 + 0.2
O _
4.5 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT 1 2 3 P _
2.4 + 0.2
1. GATE
2. DRAIN Q _
9.2 + 0.2
3. SOURCE
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
TO-220AB
@TC=25 160*
ID
Drain Current @TC=100 101 A
Pulsed (Note1) IDP 480*
Single Pulsed Avalanche Energy EAS 960 mJ
(Note 2)
Repetitive Avalanche Energy EAR 12 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 167 W
PD
Dissipation Derate above 25 1.33 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 ~ 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC 0.75 /W
Thermal Resistance,
RthJA 62.5 /W
Junction-to-Ambient
* : Drain current limited by maximum junction temperature.
Calculated continuous Current based on maximum allowable junction temperature
PIN CONNECTION
D
G
S
2011. 1. 12 Revision No : 0 1/7
KU035N06P
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 60 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=5mA, Referenced to 25 - 0.06 - V/
Drain Cut-off Current IDSS VDS=60V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=80A - 2.9 3.5 m
Dynamic
Total Gate Charge Qg - 200 -
VDS=48V, ID=80A
Gate-Source Charge Qgs - 35 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 70 -
Turn-on Delay time td(on) - 110 -
VDD=30V
Turn-on Rise time tr - 150 -
ID=80A ns
Turn-off Delay time td(off) - 460 -
RG=25 (Note4,5)
Turn-off Fall time tf - 280 -
Input Capacitance Ciss - 8400 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 960 - pF
Reverse Transfer Capacitance Crss - 520 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 150
VGS Pulsed Source Current ISP - - 600
Diode Forward Voltage VSD IS=150A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=80A, VGS=0V, - 65 - ns
Reverse Recovery Charge Qrr dIs/dt=300A/ s - 0.18 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =100 H, IS=80A, VDD=48V, RG=25 , Starting Tj=25 .
Note 3) IS 80A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KU
035N06P
001 2
1 PRODUCT NAME
2 LOT NO
2011. 1. 12 Revision No : 0 2/7
KU035N06P
Fig1. ID - VDS Fig2. ID - VGS
103 103
VDS = 2V
VGS=5V
VGS=7V, 10V
Drain Current ID (A)
Drain Current ID (A)
102 VGS=4.5V 102
100 C
25 C
101 101
100 100
10-2 10-1 100 101 102 2 3 4 5 6 7 8
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Fig3. BVDSS - Tj Fig4. RDS(ON) - ID
Normalized Breakdown Voltage BVDSS
1.3 3.0
VGS = 0V VGS=10V
On - Resistance RDS(ON) (m)
IDS = 5mA ID=65A
1.2 2.5
2.0
1.1
1.5
1.0
1.0
0.9
0.5
0.8 0
-50 0 50 100 150 200 -50 0 50 100 150 200
Junction Temperature Tj ( C ) Drain Current ID (A)
Fig5. IS - VSD - Fig6. IS - VSD -
103 103
Reverse Drain Current IS (A)
Reverse Drain Current IS (A)
VGS=7V, 10V
102 102
100 C VGS=4V VGS=3V
25 C VGS=0V
101 101
VGS=2V
100 100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source - Drain Voltage VSD (V) Source - Drain Voltage VSD (V)
2011. 1. 12 Revision No : 0 3/7
KU035N06P
Fig7. RDS(ON) - ID Fig8. ID- Tj
16 180
On - Resistance RDS(ON) (m)
160
140
Drain Current ID (A)
12
120
100
8
VGS=4.5V 80
VGS=5V 60
4 40
VGS=10V 20
0 0
0 50 100 150 200 250 300 350 0 25 50 75 100 125 150 175 200
Drain Current ID (A) Junction Temperature Tj ( )
Fig 9. C - VDS Fig10. Qg- VGS
105 12
VDS=48V
Gate - Source Voltage VGS (V)
10
Capacitance (pF)
Ciss
104 8
6
103 Coss 4
Crss 2
Frequency=1MHz, VGS=0V
102 0
0 10 20 30 40 0 40 80 120 150 200 240
Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)
Fig11. Safe Operation Area
103
10us
Drain Current ID (A)
102 100us
1ms
101 Operation in this 10ms
area is limited by RDS(ON)
DC
100
Tc= 25 C
Single nonrepetitive pulse
-1
10
10-1 100 101 102
Drain - Source Voltage VDS (V)
2011. 1. 12 Revision No : 0 4/7
KU035N06P
Fig12. Transient Thermal Response Curve
100
Transient Thermal Resistance
Duty=0.5
0.2
0.1 PDM
10-1
t1
0.05
0.02
t2
0.01
- Duty Factor, D= t1/t2
Single Pulse
10-2
10-5 10-4 10-3 10-2 10-1 100 101
TIME (sec)
2011. 1. 12 Revision No : 0 5/7
KU035N06P
Fig13. Gate Charge
VGS
10 V
Fast
Recovery
ID Diode
0.8 VDSS
ID
1.0 mA
Q
VDS Qgs Qgd
Qg
VGS
Fig14. Single Pulsed Avalanche Energy
1 BVDSS
EAS= LIAS2
2 BVDSS - VDD
BVDSS
L
IAS
0.8 VDSS
25
VDS ID(t)
VGS VDD VDS(t)
10 V
Time
tp
Fig15. Resistive Load Switching
VDS
90%
RL
0.5 VDSS
VGS 10%
td(off)
25 td(on) tr
VDS tf
ton toff
VGS
10V
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KU035N06P
Fig16. Source - Drain Diode Reverse Recovery and dv /dt
DUT Body Diode Forword Current
VDS
ISD
IF (DUT) di/dt
IRM
IS
Body Diode Reverse Current
0.8 VDSS
VDS Body Diode Recovery dv/dt
(DUT)
driver VSD
VDD
10V VGS
Body Diode Forword Voltage drop
2011. 1. 12 Revision No : 0 7/7