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BC868
TRANSISTOR (NPN)
SOT-89
FEATURES
High current
Low voltage
1. BASE
MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR
3. EMITTER
Symbol Parameter Value Units
VCBO Collector-Base Voltage 32 V
VCEO Collector-Emitter Voltage 20 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 1 A
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 32 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V
Collector cut-off current ICBO VCB=25V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
hFE(1) VCE=1V,IC=500mA 85 375
DC current gain hFE(2) VCE=1V,IC=1A 60
hFE(3) VCE=10V,IC=5mA 50
Collector-emitter saturation voltage VCE(sat) IC=1A,IB=100mA 0.5 V
VBE1 VCE=10V,IC=5mA 0.62 V
Base-emitter voltage
VBE2 VCE=1V,IC=1A 1 V
Transition frequency fT VCE=5V,IC=10mA,f=100MHz 40 MHz
CLASSIFICATION OF hFE(1)
Rank BC868-10 BC868-16 BC868-25
Range 85-160 100-250 160-375
Marking CBC CCC CDC
1
JinYu www.htsemi.com
semiconductor
Date:201/5
BC868
Typical Characteristics
2
JinYu www.htsemi.com
semiconductor
Date:201/5