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SEMICONDUCTOR KRA309
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
FEATURES M B M
With Built-in Bias Resistors DIM MILLIMETERS
A _
2.00 + 0.20
D
Simplify Circuit Design 2 B _
1.25 + 0.15
A
J
C _
0.90 + 0.10
Reduce a Quantity of Parts and Manufacturing Process
G
1 3
D 0.3+0.10/-0.05
High Packing Density. E _
2.10 + 0.20
G 0.65
P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
L 0.70
C
L
H
EQUIVALENT CIRCUIT BIAS RESISTOR VALUES M _
0.42 + 0.10
N 0.10 MIN
N N
TYPE NO. R1(k ) R2(k ) K P 0.1 MAX
OUT
KRA309 47 22
R1 1. COMMON (EMITTER)
IN 2. IN (BASE)
R2 3. OUT (COLLECTOR)
COMMON(+)
USM
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Output Voltage VO -50 V
Input Voltage VI -40, 15 V
Output Current IO -100 mA
Power Dissipation PD 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
MARK SPEC Marking
TYPE KRA309 Lot No.
MARK PJ
Type Name
2008. 10. 29 Revision No : 5 1/4
KRA309
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Output Cut-off Current IO(OFF) VO=-50V, VI=0 - - -500 nA
DC Current Gain GI VO=-5V, IO=-10mA 70 140 -
Output Voltage VO(ON) IO=-10mA, II=-0.5mA - -0.1 -0.3 V
Input Voltage (ON) VI(ON) VO=-0.2V, IO=-5mA - -3.0 -5.8 V
Input Votlage (OFF) VI(OFF) VO=-5V, IO=-0.1mA -1.5 -1.82 - V
Transition Frequency fT * VO=-10V, IO=-5mA - 200 - MHz
Input Current II VI=-5V - - -0.16 mA
Rise Time tr - 0.38 -
Switching VO=-5V, VIN=-5V
StorageTime tstg - 0.7 - S
Time RL=1k
Fall Time tf - 0.48 -
Input Resistor R1 - 32.9 47 61.1 k
Resistor Ratio R2/R1 - 0.37 0.47 0.57
Note : * Characteristic of Transistor Only.
2008. 10. 29 Revision No : 5 2/4
KRA309
I O - V I(ON) I O - V I(OFF)
KRA307 KRA307
-100 -25
-3k
VO =-0.2V VO =-5V
25
OUTPUT CURRENT I O (mA)
-50
OUTPUT CURRENT I O (