msc81250.pdf part of ST msc81250 msc81250.pdf, . Electronic Components Datasheets Active components Transistors ST msc81250.pdf text manual preview

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MSC81250M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS

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. REFRACTORY\GOLD METALLIZATION

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RUGGEDIZED VSWR 20:1
INTERNAL INPUT/OUTPUT MATCHING

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LOW THERMAL RESISTANCE
METAL/CERAMIC HERMETIC PACKAGE
P OUT = 250 W MIN. WITH 6.2 dB GAIN
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE BRANDING
MSC81250M 81250M

PIN CONNECTION

DESCRIPTION
The MSC81250M device is a high power pulsed
transistor specifically designed for DME/TACAN
avionics applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81250M is housed in the unique 1. Collector 3. Emitter
AMPACTM package with internal input/output 2. Base 4. Base
matching structures.

ABSOLUTE MAXIMUM RATINGS (T case = 25