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2N7002PT
60 V, 310 mA N-channel Trench MOSFET
Rev. 1 -- 2 July 2010 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tamb = 25 C - - 60 V
VGS gate-source voltage Tamb = 25 C - - 20 V
ID drain current Tamb = 25 C; [1] - - 310 mA
VGS = 10 V
RDSon drain-source on-state Tj = 25 C; - 1 1.6
resistance VGS = 10 V;
ID = 500 mA
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm2.
NXP Semiconductors 2N7002PT
60 V, 310 mA N-channel Trench MOSFET
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
3 D
2 S source
3 D drain
G
1 2
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
2N7002PT SC-75 plastic surface-mounted package; 3 leads SOT416
4. Marking
Table 4. Marking codes
Type number Marking code
2N7002PT Z1
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tamb = 25 C - 60 V
VGS gate-source voltage Tamb = 25 C - 20 V
ID drain current VGS = 10 V [1]
Tamb = 25 C - 310 mA
Tamb = 100 C - 240 mA
IDM peak drain current Tamb = 25 C; - 1.2 A
single pulse; tp 10 s
2N7002PT All information provided in this document is subject to legal disclaimers.